By U. Roessler (auth.), U. Roessler (eds.)
The Landolt-Börnstein subvolumes III/44A and III/44B replace the present eight volumes III/41 approximately Semiconductors and include new information and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The textual content, tables figures and references are supplied in self-contained rfile documents, every one devoted to a substance and estate. the 1st subvolume III/44A encompasses a "Systematics of Semiconductor Properties", which might actually help the non-specialist person to appreciate the which means of the fabric parameters. Hyperlinked lists of drugs and houses lead on to the records and make the digital model an easy-to-use resource of semiconductor information. within the new updates III/44A and III/44B, hyperlinks to current fabric in III/41 or to comparable records for a particular substance also are included.
Read Online or Download New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds PDF
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Extra info for New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds
This is described by the Schroedinger equation for the electron-hole pair including the electron-hole Coulomb interaction. If electron and hole are described as free particles in isotropic parabolic energy bands this is the hydrogen model. It can be separated into the free center-of-mass motion of the electron-hole pair and the relative motion due to the Coulomb interaction, which is quantized in bound states (excitons), as depicted in Fig. 4. 1007/978-3-540-48529-2_1 # Springer 2008 22 Systematics of Semiconductor Data Fig.
It is determined by the scattering processes, by which the quantum mechanical state of a carrier (its momentum and energy) is changed. The energy dependence of the carrier lifetime τ(E) depends on the scattering process and leads, after performing the energy integral in Eq. (118), to characteristic temperature dependencies for the different scattering processes [85R]. g. on their concentration. A schematic picture of the temperature dependent mobility and the inﬂuence of the various scattering mechanisms is shown in Fig.
Due to inhomogeneous strain (strain relaxation). Defects are also important for the lattice and optical properties. In the lattice they can give rise to localized modes with characteristic vibrational mode frequencies if the mass of the impurity atom differs strongly from that of the host atom. The effect of defects on the optical properties is due to formation of complexes in which an exciton is bound to an impurity (exciton impurity complexes). Such complexes are seen in luminescence and are essential for the efﬁciency of light emission and its application in light-emitting devices.